RT2N07M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
RT2N07M is a compo�½��½� transistor with built-in bias resistor
�½��½�
OUTLINE DRAWING
2.1
1.25
Unit:mm
●Built-in bias resistor ( R1=1 KΩ , R2=10KΩ )
●Mini package for easy mounting
2.0
0.65
①
②
0.65
③
⑤
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
④
0.9
0.65
⑤
RTr1
④
RTr2
0∼0.1
R1
①
R2
②
R2
③
R1
TERMINAL CONNECTOR
①
:BASE1
②
:EMITTER
(COMMON
)
③
:BASE2
④
:COLLECTOR2
⑤
:COLLECTOR1
JEITA:−
JEDEC
:−
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
(Ta=25℃ (
)RTr1、RTr2
)
Parameter
Ratings
50
6
50
100
200
150
+150
-55∼+150
Unit
V
V
V
mA
mA
mW
℃
℃
MARKING
⑤
④
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
(Total
Ta=25℃
)
Junction temperature
Storage temperature
N
C
①
② ③
ISAHAYA ELECTRONICS CORPORATION
0.13
0.2
FEATURE