RT2N21M
COMPOSITE TRANSISTOR WITH RESISTOR
FOR SWITCHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
RT2N21M is a composite transistor with built-in bias resistor
OUTLINE DRAWING
2.1
1.25
Unit:mm
●Built-in bias resistor ( R1=10 KΩ)
●Mini package for easy mounting
2.0
0.65
①
②
0.65
③
⑤
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
④
0.9
0.65
⑤
RTr1
④
RTr2
0∼0.1
R1
①
②
③
R1
TERMINAL CONNECTOR
①
：BASE１
②
：EMITTER
（COMMON
）
③
：BASE２
④
：COLLECTOR２
⑤
：COLLECTOR１
EIAJ
：−
JEDEC
：−
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
（Ta=25℃ （
）RTr1、RTr2
）
Parameter
Ratings
50
6
50
100
200
150
＋150
-55∼＋150
Unit
V
V
V
mA
mA
mW
℃
℃
MARKING
⑤
④
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
（Total
Ta=25℃
）
Junction temperature
Storage temperature
N
7
①
② ③
ISAHAYA ELECTRONICS CORPORATION
0.13
0.2
FEATURE
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
