RT3C99M
Composite Transistor
For Muting Application
Silicon Npn Epitaxial Type
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
DC REVERSE CURRENT GAIN hFER
10000
Ta=25℃
VCE=-2V
1000
10000
DC FORWARD CURRENT GAIN hFE
Ta=25℃
VCE=2V
1000
100
100
10
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
10
-0.1
-1
-10
COLLECTOR CURRENT IC(mA)
-100
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
1000
C TO E SATURATION VOLTAGE
VCE(sat)(mV)
ON RESISTANCE Ron(Ω)
10
ON RESISTANCE VS. BASE CURRENT
Ta=25℃
IC/IB=10
100
Ta=25℃
10
1
1
0.1
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
1000
0.1
0.1
1
BASE CURRENT
10
IB(mA)
100
GAIN BAND WIDTH PRODUCT VS.
EMITTER CURRENT
100
GAIN BAND WIDTH PRODUCT (MHz)
Ta=25℃
VCE=6V
COLLECTOR OUTPUT CAPACITANCE
VS.COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
Ta=25℃
IE=0
f=1MHz
10
10
-0.1
-1
EMITTER CURRENT
-10
IE(mA)
-100
1
0.1
1
10
VCB(V)
100
COLLECTOR TO BASE VOLTAGE
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
