PRELIMINARY
RT3J11M
Composite Transistor
For high speed switching
Silicon
Ｐ-channel
MOSFET
DESCRIPTION
RT3J11M is a composite transistor built with two
INJ0001AX
chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
・Input impedance is high, and not necessary to consider a drive
electric current.
・Vth is low, and drive by low voltage is possible. Vth=0.6�½�1.2V
・Low on Resistance. Ron=7Ω(TYP)
・High speed switching.
・Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65
0.13
0�½�0.1
⑤
Tr.1
0.9
0.65
⑥
④
Tr.2
TERMINAL
CONNECTOR
①：SOURCE1
②：GATE1
③：DRAIN2
④：SOURCE2
⑤：GATE2
⑥:DRAIN1
JEITA：SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
UNIT
V
V
mA
mW
℃
℃
6
5
4
MARKING
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation（Ta=25℃）
Channel temperature
Range of Storage temperature
-50
±8
-100
150
＋125
-55�½�＋125
.
.
Ｊ１ １
１
2
3
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
