RT3K44M
Composite Transistor
For high speed switching
Silicon N-channel MOSFET
DESCRIPTION
RT3K44M is a composite transistor built with two
INK0010AX
chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
・Input impedance is high, and not necessary to consider a drive
electric current.
・Vth is low, and drive by low voltage is possible. Vth=1.0�½�2.0V
・Low on Resistance.
R
DS
(on)=4.0Ω(TYP)＠I
D
=100mA, V
GS
=4.0V
R
DS
(on)=3.0Ω(TYP)＠I
D
=100mA, V
GS
=10V
・High speed switching.
・Small package for easy mounting.
2.0
0.65
APPLICATION
High speed switching , Analog switching
0.65
⑥
Tr.1
⑤
0�½�0.1
④
Tr.2
TERMINAL
CONNECTOR
①：SOURCE1
②：GATE1
③：DRAIN2
④：SOURCE2
⑤：GATE2
⑥:DRAIN1
JEITA：SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
60
UNIT
V
V
mA
mW
℃
℃
MARKING
⑥ ⑤ ④
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation（Ta=25℃）
Channel temperature
Range of Storage temperature
±20
100
150
＋150
-55�½�＋150
.
Ｋ４４
C９９
Ｙ９９
C９７
① ② ③
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
