PRELIMINARY
RT3N55M
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT3N55M is a composite transistor built with two
RT1N144 chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65 0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
Silicon NPN epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.65
0.13
0∼0.1
⑥
RTr1
⑤
R1
R2
R2
①
R1
②
RTr2
④
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
0.9
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation（Total, Ta=25℃）
Junction temperature
Storage temperature
RATING
50
6
50
100
200
150
＋150
-55∼＋150
UNIT
V
V
V
mA
mA
mW
℃
℃
6
5
4
MARKING
.
N5 5
2
3
１
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
