PRELIMINARY
RT3N66M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Limits
Symbol
Parameter
Test conditions
I =100μA,R =∞
Unit
Min
50
-
Typ
-
Max
-
Collector to Emitter break down voltage
Collector cut off current
V
μA
-
V
(BR)CEO
C
BE
-
0.1
-
I
V
CB
=50V,I =0
E
CBO
DC forward current gain
100
-
-
h
V
CE
=5V,I =1mA
C
FE
Collector to Emitter saturation voltage
Input resistor
0.1
4.7
200
0.3
6.1
-
V
V
R
I =10mA,I =0.5mA
C B
CE(sat)
1
kΩ
-
3.3
-
Gain band width product
f
V
CE
=6V,I =-10mA
MH
Z
T
E
TYPICAL CHARACTERISTICS
DC forward gain current - Collector current
Input on voltage - Collector current
1000
100
10
10
VCE=5V
VCE=0.2V
1
0.1
0.1
1
10
100
0.1
1
10
100
Collector current ꢀIc(mA)
Collector current Ic (mA)
Collector current -Input off voltage
1000
100
10
VCE=5V
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
Input off voltageꢀVI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
