PRELIMINARY
RT3P66M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3P66M is a composite transistor built with
RT1P430 chip and RT1P430 chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit
:mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.65
0.13
0∼0.1
⑥
RTr1
⑤
R1
R2
RTr2
④
R1
②
TERMINAL
CONNECTOR
①
:EMITTER1
②
:BASE1
③
:COLLECTOR2
④
:EMITTER2
⑤
:BASE2
⑥:COLLECTOR1
JEITA:SC-88
0.9
①
0.65
③
MAXIMUM RATING (Ta=25
℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
(Total,
Ta=25℃
)
Junction temperature
Storage temperature
RATING
-50
-6
-50
-100
-200
150
+150
-55∼+150
UNIT
V
V
V
mA
mA
mW
℃
℃
MARKING
⑥ ⑤ ④
.
T6 6
① ② ③
ISAHAYA ELECTRONICS CORPORATION