PRELIMINARY
RT3P66U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3P66U is a composite transistor built with two
RT1P430 in USM6F package.
OUTLINE DRAWING
1.6
±0.05
1pin ﾏ�½��½�
1.2
±0.05
Unit：mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
1.6
±0.05
1. 0
0.5
0.5
(0.5)
6
1
(0.95)
2
(0.5)
5
0.2
±0.05
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
3
(Φ0.1
�½�0.2)
4
※
0.5
±0.05
0.12
±0.05
⑥
RTr
⑤
R1
④
RTr
①
R1
②
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：－
ISAHAYA：USM6F
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation（Total, Ta=25℃）
Junction temperature
Storage temperature
RATING
-50
-6
-50
-100
-200
125
＋150
-55�½�＋150
UNIT
V
V
V
mA
mA
mW
℃
℃
１
2
3
6
5
4
MARKING
66
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
