RT3TDDU
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TDDU is a composite transistor built with two
RT1N237 chip and RT1P237 chip in SC-75A package.
OUTLINE DRAWING
1.6
±0.05
1pin マ�½��½�
1.2
±0.05
Unit:mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
1.6
±0.05
1. 0
0.5
0.5
(0.5)
6
1
(0.95)
2
(0.5)
5
0.2
±0.05
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
3
(Φ0.1
�½�0.2)
4
0.5
±0.05
0.12
±0.05
※PNP
built in transistor of ”-”sign is abbreviation.
⑥
RTr1
⑤
R1
R2
R2
R1
④
RTr2
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
JEITA:-
ISAHAYA:USM6F
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
V
IN
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input Voltage
Collector current
Peak Collector current
Collector dissipation(Total, Ta=25℃)
Junction temperature
Storage temperature
RATING
50
6
50
12
100
200
125
+150
-55�½�+150
UNIT
V
V
V
V
mA
mA
mW
℃
℃
1
2
3
6
5
4
MARKING
DD
ISAHAYA ELECTRONICS CORPORATION