PRELIMINARY
RT3WLMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Epitaxial Type
DESCRIPTION
RT3WLMM is a composite transistor built with
2SC3052 chip and 2SA1235A chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
For low frequency amplify application
0.65
0.65
0�½�0.1
Tr1
Tr2
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥：COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
P
C
（Total）
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation（Ta=25℃）
Junction temperature
Storage temperature
RATING
Tr1
50
6
50
200
150
＋125
-55�½�＋125
Tr2
60
UNIT
V
V
V
mA
mW
℃
℃
MARKING
6
5
4
.
１
WL M
2
3
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
