RT3XBBM
Composite Transistor
For Muting Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
DESCRIPTION
RT3XBBM is a composite transistor with built-in bias resistor
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit：mm
FEATURE
●Built-in bias resistor ( R1=10 KΩ)
2.0
●Mini package for easy mounting
APPLICATION
muting circuit、switching circuit
0.65
0.65
⑥
0�½�0.1
⑤
R1
R2
④
RTr1
RTr2
R1
①
②
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATINGS
Symbol
V
CBO
V
EBO
V
CEO
I
C
（Ta=25℃）（RTr1、RTr2）
Parameter
Ratings
40
40
20
400
150
＋150
-55�½�＋150
Unit
V
V
V
mA
mW
℃
℃
6
5
4
MARKING
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation（Total Ta=25℃）
Junction temperature
Storage temperature
P
C
T
j
T
stg
.
.
ＸＢＢ
１
2
3
ISAHAYA ELECTRONICS CORPORATION
0.13
0.9
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
