＜M F T＞
Preliminary
*This is tentative specification.
RT8H072E
IGBT gate interception circuit
DESCRIPTION
RT8H072E is composed by NPN transistors,
PNP transistors and resistors.
It can miniaturization of a set and reduce parts or
time necessary for completion.
Connected This MFT with the level-shift circuit of IPM,
It can prevent the fault that IGBT gate turn on
at the same time.
FEATURES
● Miniaturization of a set.
● Open collector output.
OUTLINE DRAWING
APPLICATION
The protection of IGBT Gate.
Unit：mm
PIN CONFIGURATION
①
②
③
④
⑧
⑦
⑥
⑤
①VCC
②IN
③GND
④N.C.
⑧OUT4
⑦OUT3
⑥OUT2
⑤OUT1
BLOCK DIAGRAM
VCC
VCC
High
LEVEL
VCC
IN
VCC
VCC
OUT1
OUT2
OUT3
OUT4
S
R
Low
LEVEL
Q
GND
110427
（1／3）
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
