<Multi-Function Transistor>
RT8H255C
IGBT Gate Driver
DESCRIPTION
RT8H255C is a integrating IGBT gate drive circuit.
This product can drive IGBT with two external transistors.
GATEIN terminal have hysteresis input voltage.
Case of “L→H” propagation, B terminal output low signal
at over 2.80V. Case of “H→L” propagation, B terminal
output high signal at under 2.48V.
PIN CONFIGURATION
2.8±0.1
0.65±0.2
1.50±0.1
0.65±0.2
①
⑥
Unit:mm
0.95±0.05
②
③
⑤
④
FEATURE
The miniaturization of a set and high-density mounting
are possible.
IGBT Gate Driver
6
5
4
0½0.1
255
１
2
3
Outline
①A
②B
③VCC
④GATEIN
⑤GND
⑥DI
BLOCK DIAGRAM
VCC
3
DI
6
A
1
GATEIN
4
Reference
voltage
Driver
B
2
GND
5
0.12±0.01
0.81
APPLICATION
1.1±0.1
0.33±0.05
2.80±0.2
1.9±0.1
100621
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
