ＲＴＡＮ４３０Ｘ SERIES
FEATURE
・Built-in bias resistor (R1=4.7kΩ)
・Small package for easy mounting.
・High reverse hFE
・Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA）
・Low on Resistance
Ron=0.80Ω(TYP.)（@VI=5V）
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
RTAN430T2 (PRELIMINARY)
RTAN430M
2.1
0.2
0.8
0.2
0.425
1.25
Unit：mm
0.425
0.25
0.4
APPLICATION
muting circuit , switching circuit
1.2
0.8
0.65
①
②
③
①
②
③
2.0
1.3
0.4
0.9
0.65
EQUIVALENT CIRCUIT
C
(OUT)
0.7
R1
B
(IN)
JEITA, JEDEC：－
ISAHAYA：T-USM
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
RTAN430U
1.6
0.4
0.8
0.4
JEITA：SC-70
JEDEC：－
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
RTAN430C
2.5
0.5
1.5
0.5
E
(GND)
0.3
0�½�0.1
0.15
①
②
③
0�½�0.1
0.16
0.4
0.5
①
②
③
2.9
1.90
1.6
1.0
0.7
0.55
0.15
1.1
JEITA：SC-75A
JEDEC：－
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
0�½�0.1
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
0.8
0.95
0.5
0.95
0.5
0.3
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
