〈SMALL-SIGNAL
TRANSISTOR〉
RTGN432P
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
DISCRIPTION
RTGN432P is a one chip transistor with
built-in bias transistor.
FEATURE
●
Built-in bias resistor
（R1=4.7kΩ,R2=10kΩ）
●
High collector current IC=1A
●
Built-in zener diode between collector and base
APPLICATION
Motor driver circuit
OUTLINE DRAWING
4.6 MAX
1.6
1.5
Unit：mm
E
0.8 MIN
C
B
0.53
MAX
2.5
4.2 MAX
0.4
0.48 MAX
1.5
3.0
MARKING
TERMINAL CONNECTOR
Ｅ:
EMITTER
Ｃ:
COLLECTOR
Ｂ:
BASE
JEDEC :
EQUIVALENT CIRCUIT
C
MARKING
A part of EIAJ standard
B
R1
R2
E
The last number
of fisical year
N E
Marking month
Running No.
MAXIMUM RATING
（Ta=25℃）
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current (DC)
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
RATING
60±10
10
60±10
1
2
500
＋150
-55�½�＋150
UNIT
V
V
V
A
A
mW
℃
℃
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
