Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3442
DESCRIPTION
·With
TO-3 package
·Excellent
safe operating area
APPLICATIONS
·For
industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
160
140
7
10
15
117
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
1.5
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
