INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Excellent
Safe Operating Area
·High
DC Current Gain-h
FE
=15(Min)@I
C
= 15A
·Low
Saturation Voltage-
: V
CE(
sat
)= 2.0V(Max)@ I
C
= 15A
APPLICATIONS
·Designed
for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
50
50
40
5
30
30
7.5
15
150
200
-65~200
UNIT
V
V
V
V
A
A
A
A
W
℃
℃
2N3771
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
