Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
2N3791 2N3792
·With
TO-3 package
·Complement
to type 2N3715 ,2N3716
·Excellent
safe operating area
APPLICATIONS
Designed for medium-speed switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25
℃)
SYMBOL
PARAMETER
2N3791
V
CBO
Collector-base voltage
2N3792
2N3791
V
CEO
Collector-emitter voltage
2N3792
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-7
-10
-4
150
200
-65~200
V
A
A
W
℃
℃
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
