Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N4918 2N4919 2N4920
DESCRIPTION
・With
TO-126 package
・Complement
to type 2N4921/4922/4923
・Excellent
safe operating area
・Low
collector saturation voltage
APPLICATIONS
・For
driver circuits ,switching ,and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
导�½�
电半
固
INC
Collector-base voltage
Collector-emitter voltage
V
CBO
GE
HAN
2N4918
2N4919
ICO
SEM
Open emitter
Open base
Open collector
CONDITIONS
TOR
DUC
N
VALUE
-40
-60
-80
-40
-60
-80
-5
-1
-3
-1
UNIT
V
2N4920
2N4918
2N4919
2N4920
V
CEO
V
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
V
A
A
A
W
℃
℃
T
C
=25℃
30
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.16
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
