Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
DESCRIPTION
・With
TO-3 package
・High
speed
・Low
collector saturation voltage
APPLICATIONS
・They
are especially intended for high current
and fast switching applications
PINNING
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
固电
IN
导�½�
半
2N5038
2N5039
2N5038
Open base
Collector-base voltage
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
SEM
NG
HA
C
2N5039
Open emitter
ND
ICO
CONDITIONS
TOR
UC
VALUE
150
120
90
75
7
20
30
5
UNIT
V
V
V
A
A
A
W
℃
℃
Open collector
T
C
=25℃
140
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.25
UNIT
℃/W