Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2N5190/5191/5192
・Excellent
safe operating area
APPLICATIONS
・For
use in medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2N5193 2N5194 2N5195
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N5193
V
CBO
Collector-base voltage
2N5194
2N5195
2N5193
V
CEO
Collector-emitter voltage
2N5194
2N5195
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-40
-60
-80
-5
-4
-7
-1
40
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
3.12
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
