Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N4398/4399/5745
・Low
collector/saturation voltage
・Excellent
safe operating area
APPLICATIONS
・For
use in power amplifier and switching
circuits applications.
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N5301 2N5302 2N5303
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
IN
导�½�
半
PARAMETER
CONDITIONS
2N5301
2N5302
2N5303
Collector-base voltage
V
CEO
Collector-emitter voltage
NG
HA
C
2N5301
2N5302
2N5303
SEM
Open emitter
ND
ICO
TOR
UC
VALUE
40
60
80
40
60
80
UNIT
V
Open base
V
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
2N5301/5302
Collector current
2N5303
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
5
30
V
A
20
7.5
T
C
=25℃
200
200
-65~200
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
