INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·DC
Current Gain-
: h
FE
= 20(Min)@I
C
= 10A
·Low
Saturation Voltage-
: V
CE(
sat
)= 1.0V(Max)@ I
C
= 15A
·Complement
to Type 2N5883/5884
APPLICATIONS
·Designed
for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
2N5885
V
CBO
Collector-Base Voltage
2N5886
2N5885
V
CEO
Collector-Emitter Voltage
VALUE
60
80
60
80
5
UNIT
2N5885/5886
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
w
w
w
PARAMETER
2N5886
.cn
i
em
cs
.is
V
V
V
25
50
7.5
200
200
-65~200
A
A
A
W
℃
℃
Collector Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
MAX
0.875
UNIT
℃/W
Thermal Resistance,Junction to Case
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
