Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2N6037/6038/6039
・DARLINGTON
・High
DC current gain
APPLICATIONS
・Designed
for general-purpose amplifier
and low-speed switching applications
PINNING(see Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
2N6034 2N6035 2N6036
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6034
V
CBO
Collector-base voltage
2N6035
2N6036
2N6034
V
CEO
Collector-emitter voltage
2N6035
2N6036
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-40
-60
-80
-5
-4
-8
-0.1
40
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
3.12
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
