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2N6059 参数 Datasheet PDF下载

2N6059图片预览
型号: 2N6059
PDF下载: 下载PDF文件 查看货源
内容描述: ISC的硅NPN Darlingtion功率晶体管 [isc Silicon NPN Darlingtion Power Transistor]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 2 页 / 164 K
品牌: ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
 浏览型号2N6059的Datasheet PDF文件第2页  
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlingtion Power Transistor
DESCRIPTION
·Built-in
Base-Emitter Shunt Resistors
·High
DC current gain-
h
FE
= 750 (Min) @ I
C
= 6A
·Collector-Emitter
Sustaining Voltage-
V
CEO(SUS)
= 100V(Min)
·Complement
to type 2N6052
APPLICATIONS
·Designed
for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
C
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
2N6059
Collector Current -Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
w
w
w
PARAMETER
.cn
i
em
cs
.is
100
100
5
V
V
V
12
20
A
A
A
W
0.2
150
200
-65~200
VALUE
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
MAX
1.17
UNIT
℃/W
ThermalResistance, Junction to Case
isc Website:www.iscsemi.cn