INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlingtion Power Transistor
DESCRIPTION
·Built-in
Base-Emitter Shunt Resistors
·High
DC current gain-
h
FE
= 750 (Min) @ I
C
= 6A
·Collector-Emitter
Sustaining Voltage-
V
CEO(SUS)
= 100V(Min)
·Complement
to type 2N6052
APPLICATIONS
·Designed
for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
C
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
2N6059
Collector Current -Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
w
w
w
PARAMETER
.cn
i
em
cs
.is
100
100
5
V
V
V
12
20
A
A
A
W
℃
℃
0.2
150
200
-65~200
VALUE
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
MAX
1.17
UNIT
℃/W
ThermalResistance, Junction to Case
isc Website:www.iscsemi.cn