INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2N6107
DESCRIPTION
·DC
Current Gain-
: h
FE
= 30-150@ I
C
= -
2A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -70V(Min)
·Complement
to Type 2N6292
APPLICATIONS
·Designed
for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
w
w
w
.cn
i
em
cs
.is
VALUE
-80
-70
-5
-7
UNIT
V
V
V
A
-10
-3
40
150
-65~150
A
A
W
℃
℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
3.125
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
