Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N6282/6283/6284
・High
DC current gain
・
DARLINGTON
APPLICATIONS
・For
use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6285 2N6286 2N6287
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
CONDITIONS
2N6285
2N6286
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
HAN
C
ES
G
2N6287
2N6285
2N6286
2N6287
Open emitter
ICO
EM
OR
UCT
ND
VALUE
-60
-80
-100
-60
-80
-100
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
Open collector
-5
-20
-40
-0.5
V
A
A
A
W
℃
℃
T
C
=25℃
160
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.09
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
