Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6288 2N6290 2N6292
DESCRIPTION
・With
TO-220 package
・Complement
to PNP type:
2N6107; 2N6109 ;2N6111
APPLICATIONS
・Power
amplifier and switching
circuits applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
固电
IN
导�½�
半
PARAMETER
CONDITIONS
2N6288
2N6290
Collector-base voltage
Open emitter
V
CEO
Collector-emitter voltage
ES
ANG
CH
2N6292
2N6288
2N6290
2N6292
ND
ICO
EM
OR
UCT
VALUE
40
60
80
30
50
70
5
7
10
3
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
V
A
A
A
W
℃
℃
T
C
=25℃
40
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.125
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
