Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N6285/6286/6287
・High
DC current gain
・
DARLINGTON
APPLICATIONS
・For
use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6282 2N6283 2N6284
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6282
V
CBO
Collector-base voltage
2N6283
2N6284
2N6282
V
CEO
Collector-emitter voltage
2N6283
2N6284
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
60
80
100
5
20
40
0.5
160
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.09
UNIT
℃/W