INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 100V(Min)- 2N6338
= 120V(Min)- 2N6339
= 140V(Min)- 2N6340
= 160V(Min)- 2N6341
·High
Switching Speed
·Low
Saturation Voltage-
: V
CE(
sat
)= 1.0V(Max)@ I
C
= 10A
APPLICATIONS
·Designed
for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
2N6338
2N6339
V
CBO
Collector-Base Voltage
2N6338/6339/6340/6341
V
CEO
Collector-Emitter Voltage
w
w
w
2N6340
2N6341
2N6338
2N6339
2N6340
2N6341
.cn
i
em
cs
.is
VALUE
120
140
160
UNIT
V
180
100
120
V
140
150
7
25
50
10
200
200
-65~200
V
A
A
A
W
℃
℃
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.875
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
