Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type 2N6666/6667/6668
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・Designed
for general-purpose amplifier
and low speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6386 2N6387 2N6388
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
固电
IN
导�½�
半
V
CBO
Collector-base voltage
HAN
C
ES
G
2N6387
2N6388
2N6386
2N6387
2N6388
2N6386
ND
ICO
EM
CONDITIONS
Open emitter
Open base
OR
UCT
VALUE
40
60
80
40
60
80
UNIT
V
V
CEO
Collector-emitter voltage
V
V
EBO
I
C
Emitter-base voltage
2N6386
Collector current-DC
2N6387/6388
Open collector
5
8
V
A
10
15
0.25
T
C
=25℃
65
150
-65~150
A
A
W
℃
℃
I
CM
I
B
P
C
T
j
T
stg
Collector current-Pulse
Base current-DC
Collector power dissipation
Junction temperature
Storage temperature
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
