Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
voltage ,high speed
APPLICATIONS
Suited for 115 and 220 volt line operated
switch-mode applications such as :
・Switching
regulators
・PWM
inverters and motor controls
・Solenoid
and relay drivers
・Deflection
circuits
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6546 2N6547
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
导�½�
半
ES
G
2N6546
2N6547
2N6546
2N6547
Fig.1 simplified outline (TO-3) and symbol
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
HAN
INC
Open emitter
MIC
E
CONDITIONS
ND
O
OR
UCT
VALUE
650
850
300
400
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
I
E
I
EM
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Emitter current
Emitter current-peak
Total power dissipation
Junction temperature
Storage temperature
Open collector
9
15
30
10
25
50
V
A
A
A
A
A
W
℃
℃
T
c
=25℃
175
200
-65~200
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
