Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
voltage capability
・Fast
switching speeds
・Low
saturation voltage
APPLICATIONS
Designed for high voltage switching
applications such as
:
・Off-line
power supplies
・Converter
circuits
・Pulse
width modulated regulators
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6676 2N6677 2N6678
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6676
V
CBO
Collector-base voltage
2N6677
2N6678
2N6676
V
CEO
Collector-emitter voltage
2N6677
2N6678
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
450
550
650
300
350
400
8
15
20
5
175
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
