INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA1357
DESCRIPTION
·High
Collector Current-I
C
= -
5.0A
·DC
Current Gain-
: h
FE
= 70(Min)@I
C
= -4A
·Low
Saturation Voltage
: V
CE(
sat
)
= -1.0V(Max)@I
C
= -4A
APPLICATIONS
·Strobe
flash applications.
·Audio
power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
VALUE
-35
-20
-8
-5
-8
-1
10
UNIT
V
V
V
A
A
A
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
1.5
150
-55~150
W
℃
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
