INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA1667
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -150V(Min)
·DC
Current Gain-
: h
FE
=
60(Min)@ (V
CE
= -10V, I
C
= -0.7A)
·Complement
to Type 2SC4381
APPLICATIONS
·Designed
for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-150
V
V
CEO
Collector-Emitter Voltage
-150
V
V
EBO
I
C
Emitter-Base Voltage
-6
V
Collector Current-Continuous
-2
A
I
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
-1
A
P
C
25
W
℃
℃
T
J
T
stg
150
Storage Temperature
-55~150
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
