INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1694
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= -120V(Min)
·Good
Linearity of h
FE
·Complement
to Type 2SC4467
APPLICATIONS
·Designed
for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-120
V
V
CEO
Collector-Emitter Voltage
-120
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current-Continuous
-8
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-3
A
P
C
80
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃