INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1741
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -60V(Min)
·High
DC Current Gain-
: h
FE
=
100(Min)@ (V
CE
= -2V , I
C
= -1A)
·Low
Saturation Voltage-
: V
CE(sat)
= -0.3V(Max)@
(I
C
= -3A, I
B
= -0.15A)
B
APPLICATIONS
·This
type of power transistor is developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
,which is
ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Total Power Dissipation @T
C
=25℃
VALUE
-100
-60
-7.0
-5.0
-10
-2.5
25
UNIT
V
V
V
A
A
A
P
T
Total Power Dissipation @T
a
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature
2.0
150
-55~150
W
℃
℃
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
