INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1757
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -60V(Min)
·High
Switching Speed
·Low
Saturation Voltage-
: V
CE(sat)
= -0.3V(Max)@
(I
C
= -3A, I
B
= -0.15A)
·Wide
Area of Safe Operation
B
APPLICATIONS
·Designed
for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
V
CEO
Collector-Base Voltage
-100
V
Collector-Emitter Voltage
-60
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-5
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
a
=25℃
-10
A
2
W
P
C
Collector Power Dissipation
@T
C
=25℃
T
J
T
stg
Junction Temperature
25
150
℃
℃
Storage Temperature
-55~150