INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA1943
DESCRIPTION
·High
Current Capability
·High
Power Dissipation
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= -230V(Min)
·Complement
to Type 2SC5200
APPLICATIONS
·Power
amplifier applications
·Recommend
for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-230
V
V
CEO
Collector-Emitter Voltage
-230
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-15
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-1.5
A
P
C
150
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
