INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB1079
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= -
10A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -100V(Min)
·Complement
to Type 2SD1559
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-100
-100
-7
-20
-30
-3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
isc Website:www.iscsemi.cn