Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD1666
・Low
collector saturation voltage
・Wide
area of safe operation
APPLICATIONS
・For
low-frequency and general-purpose
amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SB1133
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-40~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
MAX
-60
-60
-6
-3
-8
2
W
UNIT
V
V
V
A
A