Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1186A
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA; I
B
=0
-160
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-50μA; I
E
=0
-160
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50μA; I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-1A ;I
B
=-0.1A
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-1A ;I
B
=-0.1A
-1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-1.0
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-1.0
μA
h
FE
DC current gain
I
C
=-0.1A ; V
CE
=-5V
60
200
f
T
Transition frequency
I
C
=-0.1A; V
CE
=-5V
50
MHz
C
OB
Collector output capacitance
I
E
=0;f=1MHz ; V
CB
=-10V
30
pF
h
FE
Classifications
D
60-120
E
100-200
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
