Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1375
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD2012
・Low
collector saturation voltage:
V
CE(SAT)
=-1.5V(Max) at I
C
=-2A,I
B
=-0.2A
・Collector
power dissipation:
P
C
=25W(T
C
=25
℃
)
APPLICATIONS
・Audio
frequency power amplifier
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
固电
IN
导�½�
半
PARAMETER
Fig.1 simplified outline (TO-220F) and symbol
Collector-base voltage
Collector-emitter voltage
ES
ANG
CH
Open emitter
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
-60
-60
-7
-3
-0.5
UNIT
V
V
V
A
A
Open base
Open collector
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
W
25
150
-55~150
℃
℃
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
