Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB507
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD313
・Low
collector saturation voltage
APPLICATIONS
・Designed
for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-60
-5
-3
-6
-1
30
150
-50~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
4.16
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
