Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220C package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・For
low-frequency power amplifier and
low-speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SB601
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
IN
导�½�
半
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Open emitter
HAN
C
ES
G
Open base
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
-100
-100
-7
-5
-8
-0.5
UNIT
V
V
V
A
A
A
Open collector
Collector current-Pulse
Base current-DC
T
C
=25℃
30
W
1.5
150
-55~150
℃
℃
P
T
Total power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
