Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB631 2SB631K
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD600/K
・High
breakdown voltage V
CEO:
-100/-120V
・High
current: -1A
・Low
saturation voltage,excellent h
FE
linearity
APPLICATIONS
・For
low-frequency power
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
2SB631
V
CBO
Collector-base voltage
ES
ANG
CH
2SB631K
2SB631
2SB631K
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
-100
V
-120
-100
UNIT
Open emitter
V
CEO
Collector-emitter voltage
Open base
-120
Open collector
-5
-1
-2
T
a
=25℃
1
V
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
V
A
A
P
D
Total power dissipation
T
C
=25℃
8
150
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃