INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB649
DESCRIPTION
·High
Collector Current-I
C
=-1
.5A
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
=-120V(Min)
·Good
Linearity of h
FE
·Low
Saturation Voltage
·Complement
to Type 2SD669
APPLICATIONS
·Power
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Collector Power Dissipation
@ T
C
=25℃
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
1
150
-55~150
℃
℃
VALUE
-180
-120
-5
-1.5
-3
20
W
UNIT
V
V
V
A
A
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
