Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB826
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・Complement
to type 2SD1062
・Wide
area of safe operation
APPLICATIONS
・Relay
drivers,
・High-speed
inverters, converters
・General
high-current switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-50
-6
-12
-15
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃