INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB880
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 2000(Min)@ I
C
= -
2A
·Wide
Area of Safe Operation
·Low
Collector-Emitter Saturation Voltage-
: V
CE(sat)
= -1.5V(Max)@ I
C
= -
2A
·Complement
to Type 2SD1190
APPLICATIONS
·Designed
for motor drivers, printer hammer drivers, relay
drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
T
C
=25℃
w
.cn
i
em
cs
.is
w
w
VALUE
-70
UNIT
V
-60
-6
V
V
-4
-6
30
W
1.75
150
-55~150
℃
℃
A
A
P
C
Collector Power Dissipation
T
a
=25℃
T
j
T
stg
Junction Temperature
Storage Temperature Range
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
